| 摘要 |
<p>A high voltage durability III-nitride semiconductor device comprises a support substrate (10) including a first silicon body (14), an insulator body (18) over the first silicon body (14), and a second silicon body (16) over the insulator body (18). The high voltage durability III-nitride semiconductor device further comprises a III-nitride semiconductor body (12) characterized by a majority charge carrier conductivity type, formed over the second silicon body (16). The second silicon body (16) has a conductivity type opposite the majority charge carrier conductivity type. In one embodiment, the high voltage durability III-nitride semiconductor device is a high electron mobility transistor (HEMT) comprising a support substrate (10) including a <100> silicon layer (14), an insulator layer (18) over the <100> silicon layer (14), and a P type conductivity <111> silicon layer (16) over the insulator layer. The high voltage durability HEMT also comprises a III-nitride semiconductor body (12) formed over the P type conductivity <111> silicon layer (16), the III-nitride semiconductor body (12) forming a heterojunction of the HEMT.
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