| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of washing a semiconductor substrate which restrains a watermark even if executing washing using a warm pure water rinsing step before a drying step for washing the semiconductor substrate. SOLUTION: The method comprises a first step (S1) for cleaning a substrate surface with chemicals, a second step (S2) for substituting the chemicals remaining on the substrate surface treated with the chemicals by pure water, a third step (S3) for treating with warm pure water for accelerating the drying of the substrate and a treating bath, a fourth step (S4) for cooling the interior of the treating bath and the substrate, and a fifth step (S5) for drying the substrate by feeding an inert gas such as N<SB>2</SB>. The generation of watermark growth is restrained by performing the drying step after cooling the temperature-raised substrate in the warm water rinsing step. COPYRIGHT: (C)2008,JPO&INPIT |
