发明名称 |
Method for producing a bonded SOI wafer |
摘要 |
<p>A silicon wafer is produced by growing a silicon single crystal ingot having a resistivity of 100 Ω•cm or more and an initial interstitial oxygen concentration of 10 to 25 ppma by the Czochralski method, processing the silicon single crystal ingot into a wafer, and subjecting the wafer to an oxygen precipitation heat treatment so that a residual interstitial oxygen concentration in the wafer should become 8 ppma or less. A silicon wafer produced as described above shows little decrease in resistivity even after a heat treatment in device production etc. Further, if a silicon wafer is produced and heat-treated so that the wafer should have the above-defined initial interstitial oxygen concentration and residual interstitial oxygen concentration, slip dislocations in a subsequent heat treatment process are prevented irrespective of resistivity. Furthermore, by forming an epitaxial layer on a surface of a silicon wafer of the present invention, a high resistivity epitaxial wafer can be produced, which is free from slip dislocations etc. and can be used for various devices. The application concerns a method for producing a bonded SOI wafer using such a silicon wafer.</p> |
申请公布号 |
EP2037009(A3) |
申请公布日期 |
2011.10.12 |
申请号 |
EP20090000023 |
申请日期 |
2000.02.25 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
ABE, TAKAO;AIHARA, KEN;AKIYAMA, SHOJI;IGARASHI, TETSUYA;QU, WEIFUNG;HAYAMIZU, YOSHINORI;SAITO, SHIGERU |
分类号 |
C30B29/06;C30B15/00;H01L21/322;H01L27/12 |
主分类号 |
C30B29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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