发明名称 BACKSIDE CONTACT SOLAR CELL WITH FORMED POLYSILICON DOPED REGIONS
摘要 <p>A solar cell includes abutting P-type and N-type doped regions in a contiguous portion of a polysilicon layer. The polysilicon layer may be formed on a thin dielectric layer, which is formed on a backside of a solar cell substrate (e.g., silicon wafer). The polysilicon layer has a relatively large average grain size to reduce or eliminate recombination in a space charge region between the P-type and N-type doped regions, thereby increasing efficiency.</p>
申请公布号 EP2374160(A1) 申请公布日期 2011.10.12
申请号 EP20090830916 申请日期 2009.11.30
申请人 SUNPOWER CORPORATION 发明人 SMITH, DAVID D
分类号 H01L31/18 主分类号 H01L31/18
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