发明名称 Method for fabricating silicon carbide material
摘要 <p>Methods for fabricating silicon carbide material are disclosed. One method includes: recycling carbon dioxide (CO 2 ) emitted from a plant; and employing the recycled carbon dioxide and silicon dioxide (SiO2) to produce the silicon carbide (SiC) material and oxygen. Another method includes: recycling a carbon dioxide (CO 2 ) emitted from a plant; and employing the recycled carbon dioxide and silicon (Si) to produce silicon carbide (SiC) material and oxygen.</p>
申请公布号 EP2374755(A1) 申请公布日期 2011.10.12
申请号 EP20110154364 申请日期 2011.02.14
申请人 GE INVESTMENT CO., LTD. 发明人 TSAI, WEN-KUEI
分类号 C01B31/36 主分类号 C01B31/36
代理机构 代理人
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