发明名称 Method for manufacturing a semiconductor substrate
摘要 <p>The invention relates to a method for manufacturing a semiconductor substrate, in particular a semiconductor-on-insulator substrate, comprising the steps of a) providing a donor substrate and a handle substrate, b) forming a pattern of one or more doped regions in, in particular inside, the handle substrate, and then c) attaching, in particular by bonding, the donor and the handle substrate to obtain a donor-handle compound.</p>
申请公布号 EP2375442(A1) 申请公布日期 2011.10.12
申请号 EP20100290181 申请日期 2010.04.06
申请人 S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES 发明人 MAZURE, CARLOS;FERRANT, RICHARD;BOURDELLE, KONSTANTIN;NGUYEN, BICH-YEN
分类号 H01L21/762;H01L21/18;H01L21/20 主分类号 H01L21/762
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