发明名称 |
Method for manufacturing a semiconductor substrate |
摘要 |
<p>The invention relates to a method for manufacturing a semiconductor substrate, in particular a semiconductor-on-insulator substrate, comprising the steps of a) providing a donor substrate and a handle substrate, b) forming a pattern of one or more doped regions in, in particular inside, the handle substrate, and then c) attaching, in particular by bonding, the donor and the handle substrate to obtain a donor-handle compound.</p> |
申请公布号 |
EP2375442(A1) |
申请公布日期 |
2011.10.12 |
申请号 |
EP20100290181 |
申请日期 |
2010.04.06 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES |
发明人 |
MAZURE, CARLOS;FERRANT, RICHARD;BOURDELLE, KONSTANTIN;NGUYEN, BICH-YEN |
分类号 |
H01L21/762;H01L21/18;H01L21/20 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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