发明名称 Forward body bias-controlled semiconductor integrated circuit
摘要 In a first functional block, a source voltage input terminal of a PMOS transistor and a substrate voltage input terminal of an NMOS transistor are connected to their voltage supply terminals, respectively. The substrate voltage input terminal of the PMOS transistor in the ith (1≰i≰n−1) functional block and the source voltage input terminal of the NMOS transistor therein are connected bijectively with the source voltage input terminal of the PMOS transistor in the i+1th functional block and the substrate voltage input terminal of the NMOS transistor therein. In the nth functional block, the substrate voltage input terminal of the PMOS transistor and the source voltage input terminal of the NMOS transistor are connected to their voltage supply terminals, respectively.
申请公布号 US8035134(B2) 申请公布日期 2011.10.11
申请号 US20070812698 申请日期 2007.06.21
申请人 PANASONIC CORPORATION 发明人 SUMITA MASAYA
分类号 H01L23/52 主分类号 H01L23/52
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