发明名称 LASER PROCESSING METHOD AND SEMICONDUCTOR DEVICE
摘要 <p>A laser processing method which can reliably form a modified region within an object to be processed along a desirable part in a line to cut is provided. This laser processing method irradiates a substrate 4 with laser light L while locating a light-converging point P within the substrate 4, so as to form a quality modified region 71 to become a starting point region for cutting within the substrate 4 along a line to cut 5. Here, the laser light L is oscillated pulsewise along a desirable part RP in the line to cut 5, and continuously in a predetermined part RC in the line to cut 5. Consequently, the quality modified region 71 is formed within the substrate 4 along the desirable part RP in the line to cut 5, whereas no quality modified region 71 is formed within the substrate 4 along the predetermined part RC in the line to cut 5.</p>
申请公布号 KR20110111505(A) 申请公布日期 2011.10.11
申请号 KR20117019739 申请日期 2005.07.27
申请人 HAMAMATSU PHOTONICS K.K. 发明人 KUNO KOJI;SUZUKI TATSUYA;SAKAMOTO TAKESHI
分类号 B23K26/00;B23K26/38;B23K26/40;H01L21/304 主分类号 B23K26/00
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