发明名称 Systems and methods for forming metal oxides using metal diketonates and/or ketoimines
摘要 A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more precursor compounds that include diketonate ligands and/or ketoimine ligands.
申请公布号 US8034728(B2) 申请公布日期 2011.10.11
申请号 US20090646246 申请日期 2009.12.23
申请人 MICRON TECHNOLOGY, INC. 发明人 VAARTSTRA BRIAN A.
分类号 H01L21/31;C23C16/40;C23C16/44;C23C16/455;H01L21/02;H01L21/314;H01L21/316 主分类号 H01L21/31
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