发明名称 |
EMR magnetic sensor having its active quantum well layer extending beyond an over-lying semiconductor layer end with tab and lead structure for improved electrical contact |
摘要 |
An extraordinary magnetoresistive sensor (EMR sensor) having a lead structure that is self aligned with a magnetic shunt structure. To form an EMR sensor according to an embodiment of the invention, a plurality of layers are deposited to form quantum well structure such as a two dimensional electron gas structure (2DEG). A first mask structure is deposited having two openings, and a material removal process is performed to remove portions of the sensor material from areas exposed by the openings. The distance between the two openings in the first mask defines a distance between a set of leads and the shunt structure. A non-magnetic metal is then deposited. A second mask structure is then formed to define shape of the leads.
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申请公布号 |
US8035927(B2) |
申请公布日期 |
2011.10.11 |
申请号 |
US20080021085 |
申请日期 |
2008.01.28 |
申请人 |
HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V. |
发明人 |
BOONE, JR. THOMAS DUDLEY;FOLKS LIESL;FONTANA, JR. ROBERT E.;GURNEY BRUCE ALVIN;KATINE JORDAN ASHER;NICOLETTI SERGIO |
分类号 |
G11B5/39 |
主分类号 |
G11B5/39 |
代理机构 |
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主权项 |
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地址 |
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