发明名称 Method for forming a multi-layer electrode underlying a piezoelectric layer and related structure
摘要 According to an exemplary embodiment, a method of forming a multi-layer electrode for growing a piezoelectric layer thereon includes a step of forming a high conductivity metal layer over a substrate. The method further includes a step of forming a seed layer over the high conductivity metal layer. The method further includes a step of forming a high density metal layer over the seed layer. The method further includes a step of forming a piezoelectric layer over the high density metal layer. The high conductivity metal layer, the seed layer, and the high density metal layer form the multi-layer electrode on which the piezoelectric layer is grown.
申请公布号 US8035277(B2) 申请公布日期 2011.10.11
申请号 US20080221276 申请日期 2008.08.01
申请人 AVAGO TECHNOLOGIES WIRELESS IP (SINGAPORE) PTE.LTD. 发明人 BARBER BRADLEY P.;CARPENTER CRAIG E.;GEHLERT PAUL P.;SHEPARD CHRISTOPHER F.
分类号 H01L41/08 主分类号 H01L41/08
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