| 发明名称 |
Method for fabrication of a semiconductor device |
| 摘要 |
A method for fabrication of a semiconductor device on a substrate, the semiconductor having a wafer. The method includes the steps:(a) applying a seed layer of a thermally conductive metal to the wafer;(b) electroplating a relatively thick layer of the conductive metal on the seed layer, and(c) removing the substrate. A corresponding semiconductor device is also disclosed.
|
| 申请公布号 |
US8034643(B2) |
申请公布日期 |
2011.10.11 |
| 申请号 |
US20030572525 |
申请日期 |
2003.09.19 |
| 申请人 |
TINGGI TECHNOLOGIES PRIVATE LIMITED |
发明人 |
KANG XUEJUN;WU DAIKE;PERRY EDWARD ROBERT;YUAN SHU |
| 分类号 |
H01L21/00;H01L21/027;H01L21/285;H01L21/4763;H01L23/36;H01L23/367;H01L23/373;H01L31/024;H01L31/052;H01L31/18;H01L33/32;H01L33/36;H01L33/44;H01S5/02;H01S5/024;H01S5/042;H01S5/323 |
主分类号 |
H01L21/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
