发明名称 Method of fabricating capacitor in semiconductor device
摘要 A capacitor includes a bottom electrode, a dielectric layer and a top electrode over a substrate. A RuXTiYOZ film is included in at least one of the bottom and top electrodes, where x, y and z are positive real numbers. A method of fabricating the capacitor through a sequential formation of a bottom electrode, a dielectric layer and a top electrode over a substrate includes forming a RuXTiYOZ film during a formation of at least one of the bottom electrode and top electrode, where x, y and z are positive real numbers.
申请公布号 US8035193(B2) 申请公布日期 2011.10.11
申请号 US20080343379 申请日期 2008.12.23
申请人 HYNIX SEMICONDUCTOR INC. 发明人 DO KWAN-WOO;LEE KEE-JEUNG;KIL DEOK-SIN;KIM YOUNG-DAE;KIM JIN-HYOCK;PARK KYUNG-WOONG;LEE JEONG-YEOP
分类号 H01L27/00 主分类号 H01L27/00
代理机构 代理人
主权项
地址