| 摘要 |
A nonvolatile semiconductor memory device includes a floating gate; an erasing gat; and a control gate. The floating gate is provided on a channel region of a semiconductor substrate through a first insulating layer. The erasing gate is provided on the floating gate through a second insulating layer. The control gate is provided beside the floating gate and the erasing gate through a third insulating layer. The floating gate is U-shaped.
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