发明名称 MEMS vibrating structure using a single-crystal piezoelectric thin-film layer having domain inversions
摘要 The present invention relates to a micro-electro-mechanical systems (MEMS) vibrating structure supported by a MEMS anchor system, and includes a single-crystal piezoelectric thin-film layer having domain inversions, which determine certain vibrational characteristics of the MEMS vibrating structure. The MEMS vibrating structure may have dominant lateral vibrations or dominant thickness vibrations. The single-crystal piezoelectric thin-film layer may include Lithium Tantalate or Lithium Niobate, and may provide MEMS vibrating structures with precise sizes and shapes, which may provide high accuracy and enable fabrication of multiple resonators having different resonant frequencies on a single substrate.
申请公布号 US8035280(B2) 申请公布日期 2011.10.11
申请号 US201113037584 申请日期 2011.03.01
申请人 RF MICRO DEVICES, INC. 发明人 LI SHENG-SHIAN;LEE SEUNGBAE;BHATTACHARJEE KUSHAL
分类号 H01L41/08 主分类号 H01L41/08
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