发明名称 |
Neutralization of trapped charge in a charge accumulation layer of a semiconductor structure |
摘要 |
A semiconductor structure. The semiconductor structure includes a semiconductor layer, a charge accumulation layer on top of the semiconductor layer, a doped region in direct physical contact with the semiconductor layer; and a device layer on and in direct physical contact with the charge accumulation layer. The charge accumulation layer includes trapped charges of a first sign. The doped region and the semiconductor layer forms a P−N junction diode. The P−N junction diode includes free charges of a second sign opposite to the first sign. The trapped charge in the charge accumulation layer exceeds a preset limit above which semiconductor structure is configured to malfunction. A first voltage is applied to the doped region. A second voltage is applied to the semiconductor layer. A third voltage is applied to the device layer. The third voltage exceeds the first voltage and the second voltage.
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申请公布号 |
US8035200(B2) |
申请公布日期 |
2011.10.11 |
申请号 |
US20100792837 |
申请日期 |
2010.06.03 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
AITKEN JOHN M.;CANNON ETHAN HARRISON;STRONG ALVIN WAYNE |
分类号 |
H01L29/786;H01L23/58;H01L23/62;H01L27/12 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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