发明名称 |
Method of forming a phase change material layer, method of forming a phase change memory device using the same, and a phase change memory device so formed |
摘要 |
A method of forming a phase change material layer includes preparing a substrate having an insulator and a conductor, loading the substrate into a process housing, injecting a deposition gas into the process housing to selectively form a phase change material layer on an exposed surface of the conductor, and unloading the substrate from the process housing, wherein a lifetime of the deposition gas in the process housing is shorter than a time the deposition gas takes to react by thermal energy.
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申请公布号 |
US8034683(B2) |
申请公布日期 |
2011.10.11 |
申请号 |
US20070785807 |
申请日期 |
2007.04.20 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO SUNG-LAE;LEE CHOONG-MAN;LEE JIN-IL;LIM SANG-WOOK;PARK HYE-YOUNG;PARK YOUNG-LIM |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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