| 摘要 |
An electrostatic discharge device has relatively superior characteristics for protecting a gate insulation layer of an input buffer transistor of a semiconductor device from static electricity while minimizing signal delay. The electrostatic discharge circuit includes a main electrostatic discharge section configured to discharge static electricity inputted to an input/output pad to at least one voltage line, an input impedance section configured to adjust an amount of current flowing from the input/output pad depending upon a frequency of an input signal of the input/output pad, an auxiliary electrostatic discharge section connected to the input impedance section and configured to discharge the static electricity inputted to the input/output pad to the at least one voltage line, and an input buffer connected between the auxiliary electrostatic discharge section and an internal circuit.
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