发明名称 |
Method and system for increasing beam current above a maximum energy for a charge state |
摘要 |
Methods and a system of an ion implantation system are disclosed that are capable of increasing beam current above a maximum kinetic energy of a first charge state from an ion source without changing the charge state at the ion source. Positive ions having a first positive charge state are selected into an accelerator. The positive ions of the first positive charge state are accelerated in acceleration stages and stripped to convert them to positive ions of a second charge state. A second kinetic energy level higher than the maximum kinetic energy level of the first charge state can be obtained.
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申请公布号 |
US8035080(B2) |
申请公布日期 |
2011.10.11 |
申请号 |
US20090609912 |
申请日期 |
2009.10.30 |
申请人 |
AXCELIS TECHNOLOGIES, INC. |
发明人 |
SATOH SHU |
分类号 |
H01J37/08;B01D59/44 |
主分类号 |
H01J37/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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