发明名称 Method for inspection of defects on a substrate
摘要 A method for inspection of defects on a substrate includes positioning a probe of a scanning probe microscopy (SPM) over and spaced apart from a substrate, includes scanning the substrate by changing a relative position of the probe with respect to the substrate on a plane spaced apart from and parallel to the substrate, and includes measuring a value of an induced current generated via the probe in at least two different regions of the substrate. The value of the induced current is variable according to at least a shape and a material of the substrate. The method further includes determining whether a defect exists by comparing the values of the induced currents measured in the at least two different regions of the substrate.
申请公布号 US8034641(B2) 申请公布日期 2011.10.11
申请号 US20100911190 申请日期 2010.10.25
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KO WOO-SEOK;JUN CHUNG-SAM;SON HYUNG-SU;YANG YU-SIN
分类号 H01L21/66 主分类号 H01L21/66
代理机构 代理人
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