发明名称 |
Method for inspection of defects on a substrate |
摘要 |
A method for inspection of defects on a substrate includes positioning a probe of a scanning probe microscopy (SPM) over and spaced apart from a substrate, includes scanning the substrate by changing a relative position of the probe with respect to the substrate on a plane spaced apart from and parallel to the substrate, and includes measuring a value of an induced current generated via the probe in at least two different regions of the substrate. The value of the induced current is variable according to at least a shape and a material of the substrate. The method further includes determining whether a defect exists by comparing the values of the induced currents measured in the at least two different regions of the substrate.
|
申请公布号 |
US8034641(B2) |
申请公布日期 |
2011.10.11 |
申请号 |
US20100911190 |
申请日期 |
2010.10.25 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KO WOO-SEOK;JUN CHUNG-SAM;SON HYUNG-SU;YANG YU-SIN |
分类号 |
H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|