| 摘要 |
The present disclosure includes various method of contact embodiments. One such method embodiment includes creating a trench in an insulator stack material of a particular thickness and having a portion of the trench positioned between two of a number of gates. This method includes depositing a filler material in the trench and etching the filler material to a particular depth that is less than the particular thickness of the insulator stack material. This method also includes depositing a spacer material to at least one side surface of the trench to the particular depth of the filler material and depositing a conductive material into the trench over the filler material.
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