发明名称 |
Power device with trenches having wider upper portion than lower portion |
摘要 |
A method of forming a semiconductor device includes the following. Removing portions of a silicon layer such that a trench having sidewalls which fan out near the top of the trench to extend directly over a portion of the silicon layer is formed in the silicon layer; and forming source regions in the silicon layer adjacent the trench sidewall such that the source regions extend into the portions of the silicon layer directly over which the trench sidewalls extend.
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申请公布号 |
US8034682(B2) |
申请公布日期 |
2011.10.11 |
申请号 |
US20100884072 |
申请日期 |
2010.09.16 |
申请人 |
FAIRCHILD SEMICONDUCTOR CORPORATION |
发明人 |
HERRICK ROBERT;LOSEE BECKY;PROBST DEAN |
分类号 |
H01L21/8242;H01L21/336;H01L29/417;H01L29/78 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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