发明名称 |
Methods of counter-doping collector regions in bipolar transistors |
摘要 |
The present invention provides a method of forming a bipolar transistor. The method includes doping a silicon layer with a first type of dopant and performing a first implant process to implant dopant of a second type opposite the first type in the silicon layer. The implanted dopant has a first dopant profile in the silicon layer. The method also includes performing a second implant process to implant additional dopant of the second type in the silicon layer. The additional implanted dopant has a second dopant profile in the silicon layer different than the first dopant profile. The method further includes growing an insulating layer formed over the silicon layer by consuming a portion of the silicon layer and the first type of dopant.
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申请公布号 |
US8035196(B2) |
申请公布日期 |
2011.10.11 |
申请号 |
US20080061264 |
申请日期 |
2008.04.02 |
申请人 |
ZARLINK SEMICONDUCTOR (US) INC. |
发明人 |
KRUTSICK THOMAS J.;SPEYER CHRISTOPHER J. |
分类号 |
H01L29/73;H01L21/331 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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