发明名称 |
Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same |
摘要 |
A nitride semiconductor light-emitting device includes a layered portion emitting light on a substrate. The layered portion includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The periphery of the layered portion is inclined, and the surface of the n-type semiconductor layer is exposed at the periphery. An n electrode is disposed on the exposed surface of the n-type semiconductor layer. This device structure can enhance the emission efficiency and the light extraction efficiency.
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申请公布号 |
US8035118(B2) |
申请公布日期 |
2011.10.11 |
申请号 |
US20080155841 |
申请日期 |
2008.06.10 |
申请人 |
NICHIA CORPORATION |
发明人 |
KUSUSE TAKESHI;SAKAMOTO TAKAHIKO |
分类号 |
H01L33/00;H01L27/15;H01L33/08;H01L33/10;H01L33/14;H01L33/20;H01L33/32;H01L33/38;H01L33/44;H01L33/62 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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