发明名称 Light emitting element, light emitting device and semiconductor device
摘要 It is an object of the present invention to provide a semiconductor device, in particular, a light emitting element which can be easily manufactured with a wet method. One feature of the invention is a light emitting device including a transistor and a light emitting element. In the light emitting element, an organic layer, a light emitting layer, and a second electrode are sequentially formed over a first electrode, and the transistor is electrically connected to the light emitting element through a wiring. Here, the wiring contains aluminum, carbon, and titanium. The organic layer is formed by a wet method. The first electrode which is in contact with the organic layer is formed from indium tin oxide containing titanium oxide.
申请公布号 US8034646(B2) 申请公布日期 2011.10.11
申请号 US20090486785 申请日期 2009.06.18
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;AKIMOTO KENGO
分类号 H01L21/00;H01L27/32;H01L31/072;H01L51/00;H01L51/30;H01L51/50;H01L51/52;H05B33/00 主分类号 H01L21/00
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