| 摘要 |
FIELD: physics. ^ SUBSTANCE: stressed semiconductor heterostructure (10) has an injection region which includes a first emitter layer (11) and a second emitter layer (12), as well as light-generating layer (13) between the emitter layers (11, 12). Between the light-generating layer (13) and the second emitter layer (12) there is an electron capture region (14) which has a capturing layer (16) next to the second emitter layer and a boundary layer (15) next to the said electron capture layer. Concentration of electrons in the second emitter layer (12) is equal to the product of concentration holes in the first emitter layer (11), the ratio of the diffusion coefficient for holes in the second emitter layer (12) to the diffusion coefficient for electrons in the first emitter layer (11) and the ratio of the diffusion length for electrons in the first emitter layer (11) and to diffusion length for holes in the second emitter layer (12). ^ EFFECT: invention enables design of a stressed semiconductor heterostructure with high apparent power of light generation. ^ 12 cl, 6 dwg |
