3D NAND FLASH MEMORY ARRAY SPLITTING STACKED LAYERS BY ELECTRICAL ERASE AND FABRICATION METHOD THEREOF,申请号KR20100030588-传众专利搜索

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发明名称	3D NAND FLASH MEMORY ARRAY SPLITTING STACKED LAYERS BY ELECTRICAL ERASE AND FABRICATION METHOD THEREOF
摘要
申请公布号	KR20110111166(A)	申请公布日期	2011.10.10
申请号	KR20100030588	申请日期	2010.04.02
申请人	SNU R&DB FOUNDATION	发明人	PARK, BYUNG GOOK;YUN, JANG GN
分类号	H01L21/8247;H01L27/115	主分类号	H01L21/8247
代理机构		代理人
主权项
地址

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