CHIP FUSE MANUFACTURING METHOD USING POROUS LAYER,申请号KR20100029796-传众专利搜索

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发明名称	CHIP FUSE MANUFACTURING METHOD USING POROUS LAYER
摘要
申请公布号	KR20110110461(A)	申请公布日期	2011.10.07
申请号	KR20100029796	申请日期	2010.04.01
申请人	NEXTRON CORPORATION	发明人	MOON, HAK BEOM;CHO, JIN HYUNG;BANG, SUC HYUN;CHOI, MYEON CHEON;KWON, HAE CHUL;KIM, CHEOL HWAN;JANG, YOON HYUNG;HWANG, HO JUN
分类号	H01H85/05	主分类号	H01H85/05
代理机构		代理人
主权项
地址

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