CHEMICAL MECHANICAL POLISHING (CMP) PROCESSING OF THROUGH-SILICON VIA (TSV) AND CONTACT PLUG SIMULTANEOUSLY

摘要

A method includes forming conductive material in a contact hole and a TSV opening, and then performing one step to remove portions of the conductive material outside the contact hole and the TSV opening to leave the conductive material in the contact hole and the TSV opening, thereby forming a contact plug and a TSV structure, respectively. In some embodiments, the removing step is performed by a CMP process.