发明名称 |
DATA STORAGE SYSTEM AND READ METHOD THEREOF |
摘要 |
Provided is a method for reading data from a nonvolatile memory device. In the method, a read method includes a first read step including reading a first memory cell of the nonvolatile memory device by applying a first set of read voltages to the first memory cell. The read method further includes a second read step including reading the first memory cell by applying a second set of read voltages and none of the voltages in the first set to the first memory cell when it is determined that the first read step results in an error and cannot be corrected with error correction. The second read step is performed by using data resulting from the first read step. |
申请公布号 |
KR20110108670(A) |
申请公布日期 |
2011.10.06 |
申请号 |
KR20100028008 |
申请日期 |
2010.03.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK, MIN GUN;PARK, KI TAE |
分类号 |
G06F11/08;G06F9/06;G06F12/06 |
主分类号 |
G06F11/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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