| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor substrate capable of detecting the operating current and diode current of a MOSFET in the fine MOSFET, in a trench gate type, or the like.SOLUTION: In the semiconductor substrate, the semiconductor substrate 1 includes a main current region 2; and a current sensing region 3 drawing a current smaller than a main current flowing through the main current region 2; in the main current region 2, a source electrode 8 is arranged on a main surface, and the source electrode 8 is brought into contact with p type semiconductor regions (bodies) 6 and ntype semiconductor regions (sources) 7; and in the current sensing region 3, an electrode 10 for detecting a MOSFET current and the electrode 11 for detecting a diode current are arranged on a main surface, the electrode 10 for detecting the MOSFET current is brought into contact with the p type semiconductor regions (the bodies) 6 and the ntype semiconductor regions (the sources) 7 and the electrode 11 for detecting the diode current is brought into contact with the p type semiconductor regions (the bodies) 6. |
