发明名称 X-RAY GENERATING APPARATUS USING HEMIMORPHIC CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide an X-ray generating apparatus using hemimorphic crystals for generating intensive X-rays.SOLUTION: The X-ray generating apparatus includes a container 1 for holding a low-pressure gas atmosphere inside, and at least two hemimorphic crystals 2, 3 each polarized in one direction, and arranged in the container in a line with their different positive and negative electric surfaces opposing each other. The hemimorphic crystals having through-holes 4, 5 extending in the polarizing directions, respectively, are arranged with their through-holes aligned to each other. A metal target 6 is arranged between the opposed hemimorphic crystals. The hemimorphic crystals neighboring each other across the metal target are electrically connected to each other to form one stacked body 7 consisting of the hemimorphic crystals and the metal target. There are provided a fixing device for fixing the stacked body to a predetermined position in the container, and temperature controller 8-10 for raising and dropping the temperatures of the hemimorphic crystals. An electric field is generated in the through-holes with the temperatures of the hemimorphic crystals raised and dropped so that electrons collide with the metal target to generate X-rays.
申请公布号 JP2011198727(A) 申请公布日期 2011.10.06
申请号 JP20100067415 申请日期 2010.03.24
申请人 DOSHISHA;KYOTO UNIV;FUTABA CORP 发明人 YOSHIKADO SHINZO;ITO YOSHIAKI;NAKANISHI GIICHI;FUKAO SHINJI;ITO SHIGEO;TONEGAWA TAKESHI;FUJIMURA YOHEI
分类号 H01J35/06;H01J35/00;H01J35/08 主分类号 H01J35/06
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