发明名称 SOLID-STATE IMAGE PICKUP ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a solid-state image pickup element for reducing a spurious signal due to charge generated on a surface of a photoelectric conversion part.SOLUTION: A charge transfer part includes a charge transfer path 3 formed in a semiconductor substrate and a charge transfer electrode 12 arranged to cover the charge transfer path 3. The photoelectric conversion part includes a charge reading region 4 which includes a first conduction-type lower impurity region 2a becoming a charge accumulation layer and a second conduction-type surface impurity region 2b and is formed between the charge transfer path and the photoelectric conversion part, and an element separation region 5 formed in a region except for the charge reading region 4 in a region between the charge transfer path 3 and the photoelectric conversion part. In the charge transfer electrode 12, a part of the charge transfer electrode 12 extends to an inside of the semiconductor substrate in at least a part of the region where the element separation region 5 is formed, and a barrier region 7 suppressing movement of the charge generated on the surface of the photoelectric conversion part to the element separation region is formed between the element separation region 5 in a region where the charge transfer electrode 12 extends to the inside of the semiconductor substrate and the surface impurity region 2b.
申请公布号 JP2011198850(A) 申请公布日期 2011.10.06
申请号 JP20100061616 申请日期 2010.03.17
申请人 FUJIFILM CORP 发明人 TANAKA SHUNSUKE
分类号 H01L27/148 主分类号 H01L27/148
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