| 摘要 |
PROBLEM TO BE SOLVED: To achieve both suppression of dishing and suppression of resistance in wide-width wiring of a semiconductor device.SOLUTION: The semiconductor device 100 includes a semiconductor substrate 1 and a wiring layer insulating film 9 formed on the semiconductor substrate 1. The wiring layer insulating film 9 has a wiring groove 11 for first wiring and a wiring groove 12 for second wiring formed, the wiring groove 12 for second wiring being wider than the wiring groove 11 for first wiring. The first wiring 21 is formed in the wiring groove 11 for first wiring, and the second wiring 22 is formed in the wiring groove 12 for second wiring, respectively. At least a part of a bottom surface of the wiring groove 12 for second wiring is a raised part 15 raised by an insulating film (for example, an insulating film 4 and an etching stopper film 5) from the bottom surface of the wiring groove 11 for first wiring at a height not reaching an upper end of the wiring groove 12 for second wiring. |
