| 摘要 |
<p>A semiconductor device, such as a PMOS or NMOS device, having localized stressors is provided. Recesses are formed on opposing sides of a gate electrode. A stress-inducing region is formed along a bottom of the recess, and a stressed layer is formed over the stress-inducing region. By having a stress-inducing region with a larger lattice structure than the stressed layer, a tensile strain may be created in a channel region of the semiconductor device and may be suitable for an NMOS device. By having a stress-inducing region with a smaller lattice structure than the stressed layer, a compressive strain may be created in the channel region of the semiconductor device and may be suitable for a PMOS device. Embodiments may be applied to various types of substrates and semiconductor devices, such as planar transistors and finFETs.</p> |
