发明名称 METHODS OF FORMING INTEGRATED CIRCUITS AND RESULTING STRUCTURES
摘要 Methods for fabricating integrated circuit devices on an acceptor substrate devoid of circuitry are disclosed. Integrated circuit devices are formed by sequentially disposing one or more levels of semiconductor material on an acceptor substrate, and fabricating circuitry on each level of semiconductor material before disposition of a next-higher level. After encapsulation of the circuitry, the acceptor substrate is removed and semiconductor dice are singulated. Integrated circuit devices formed by the methods are also disclosed.
申请公布号 KR20110110352(A) 申请公布日期 2011.10.06
申请号 KR20117019648 申请日期 2010.02.22
申请人 MICRON TECHNOLOGY, INC. 发明人 SANDHU GURTEJ S.;PARAT KRISHNA K.
分类号 H01L21/20 主分类号 H01L21/20
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