METHOD FOR GROWING SINGLE CRYSTAL SILICON HAVING SQUARE CROSS SECTION AND SILICON WAFER HAVING SQUARE SECTION

摘要

PROBLEM TO BE SOLVED: To provide a method for growing single crystal silicon having a square cross section which has a high growth rate, capable of easily controlling temperature distribution having a square shape without depending only on high-frequency coil, which suppresses the formation of crystal defects, and which uniforms in-plane distribution in resistivity, and to provide a silicon wafer having a square section.SOLUTION: The method for growing single crystal silicon having a square cross section by a FZ method for growing a single crystal silicon (2) by heating and melting a silicon raw material rod (1) by high-frequency coil (8) provided within a growth furnace comprises providing a rectangular form (9) at a lower face of the high-frequency coil (8) and bringing the rectangular form (9) into contact with molten liquid in which the silicon raw material rod (1) is melted. In addition, the single crystal silicon wafer having a square section which is made by slicing the single crystal silicon having the square cross section grown by the FZ method has in-plane distribution of four-fold symmetry in resistivity.