| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device whose on resistance is as low as possible, and to provide a method of manufacturing the semiconductor device by which the semiconductor device is easily obtained with a high yield.SOLUTION: After a SiC substrate 11 is formed into a thin plate, a support substrate 19 is electrically and mechanically bonded to a surface of the SiC substrate 11 on the other side in a thickness direction through an ohmic electrode layer 17 etc. As the support substrate 19, a substrate is used which has lower volume resistivity than that of the SiC substrate 11. After the SiC substrate 11 and support substrate 19 are thus bonded together, an external output electrode 15 etc., is formed on an SBD (Schottky Barrier Diode) 2 on one side of the SiC substrate 11 in the thickness direction. Thus, the semiconductor device 1 is manufactured. |
