发明名称 |
INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
It is an object of the present invention to improve a factor which influences productivity such as variation caused by a characteristic defect of a circuit by thinning or production yield when an integrated circuit device in which a substrate is thinned is manufactured. A stopper layer is formed over one surface of a substrate, and an element is formed over the stopper layer, and then, the substrate is thinned from the other surface thereof. A method in which a substrate is ground or polished or a method in which the substrate is etched by chemical reaction is used as a method for thinning or removing the substrate.
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申请公布号 |
US2011244656(A1) |
申请公布日期 |
2011.10.06 |
申请号 |
US201113162611 |
申请日期 |
2011.06.17 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. . |
发明人 |
DAIRIKI KOJI;KUSUMOTO NAOTO;TSURUME TAKUYA |
分类号 |
H01L21/82;H01L21/20 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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