发明名称 |
SURFACE CLEANING AND SELECTIVE DEPOSITION OF METAL-CONTAINING CAP LAYERS FOR SEMICONDUCTOR DEVICES |
摘要 |
<p>A method is provided for integrating metal-containing cap layers into copper (Cu) metallization of semiconductor devices. In one embodiment, the method includes providing a planarized patterned substrate containing metal surfaces and dielectric layer surfaces with a residue formed thereon, removing the residue from the planarized patterned substrate, and depositing metal- containing cap layers selectively on the metal surfaces by exposing the dielectric layer surfaces and the metal surfaces to a deposition gas containing metal-containing precursor vapor. The removing includes treating the planarized patterned substrate containing the residue with a reactant gas containing a hydrophobic functional group, and exposing the treated planarized patterned substrate to a reducing gas.</p> |
申请公布号 |
WO2011123368(A1) |
申请公布日期 |
2011.10.06 |
申请号 |
WO2011US30115 |
申请日期 |
2011.03.26 |
申请人 |
TOKYO ELECTRON LIMITED;TOHNOE, KAZUHITO;CERIO, FRANK, M. |
发明人 |
TOHNOE, KAZUHITO;CERIO, FRANK, M. |
分类号 |
H01L21/3205 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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