发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To appropriately suppress mutual interaction between an inductor element and wiring on its upper part on the same chip.SOLUTION: The semiconductor device has a semiconductor substrate 1 and a multilayered wiring layer formed on the semiconductor substrate 1. The multilayered wiring layer has the inductor element 10, wiring 11A, 11C, and 12 formed on the upper part of the inductor element 10, and shielding conductors 13, 14 having fixed potential between the inductor element 10 and the wiring 11A, 11C, and 12 on the inductor element, and covering the inductor element 10 in a planar view.
申请公布号 JP2011199225(A) 申请公布日期 2011.10.06
申请号 JP20100067383 申请日期 2010.03.24
申请人 RENESAS ELECTRONICS CORP 发明人 HIJIOKA KENICHIRO;TANABE AKIRA;HAYASHI YOSHIHIRO
分类号 H01L21/822;H01L27/04 主分类号 H01L21/822
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