| 摘要 |
PROBLEM TO BE SOLVED: To provide an atomic-layer deposition apparatus which can shorten a treatment period of time while suppressing the fluctuation of a film quality.SOLUTION: This apparatus includes: a substrate-supporting part 220 for supporting a plurality of substrates; a heating part 230 for heating a plurality of the substrates from the perimeter of the substrate-supporting part; three gas supply parts 300, 320 and 340 for supplying a gas for forming a thin film, which are arranged so as to be separated from each other in the direction perpendicular to the substrate; three temperature-adjusting parts 306, 326 and 346 for adjusting the temperature of the gas supplied from the gas supply parts; and a temperature-controlling part for individually controlling the temperature-adjusting parts. The respective gas supply parts include source gas supply pipes 302, 322 and 342 for supplying the source gas, and reaction gas supply pipes 304, 324 and 344 for supplying the reaction gas. The temperature-controlling part controls the temperature-adjusting parts so that the temperature of the gas supplied from the gas supply part located in the central side among three gas supply parts becomes higher than that of the gases supplied from the gas supply parts located in the surrounding sides. |
