发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR WAFER, METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT, SEMICONDUCTOR WAFER, SEMICONDUCTOR ELEMENT, AND ELECTRONIC DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor wafer by which yields are significantly improved.SOLUTION: The method of manufacturing a semiconductor wafer includes a protection film forming step of forming a stripe-shaped protection film 302 on a part on a substrate 301, and a semiconductor layer forming step of forming a semiconductor layer by growing semiconductor crystal on a portion except for a protection film 302 forming portion of the substrate 301. A substrate which satisfies that an absolute value |θp| of an off angle θp in a direction parallel to a length direction of the protection film 302 is smaller than an absolute value |θo| of an off angle θo in a direction orthogonal to the length direction of the protection film 302, and |θp| ≤0.2°, is used as the substrate 301. |
申请公布号 |
JP2011198849(A) |
申请公布日期 |
2011.10.06 |
申请号 |
JP20100061599 |
申请日期 |
2010.03.17 |
申请人 |
NEC CORP |
发明人 |
NANBAE KOICHI;MASUMOTO ICHIRO;MATSUDATE MASASHIGE;MATSUDATE MITSUKI;OYA MASATERU;NOZU SHUNSUKE;TOKUTOME KEIICHI |
分类号 |
H01S5/22;H01L21/20;H01S5/223 |
主分类号 |
H01S5/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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