| 摘要 |
PROBLEM TO BE SOLVED: To reduce the resistance of a nonvolatile semiconductor memory device compared with the conventional level in a structure composed of a semiconductor layer connected to the bottoms of memory strings that are adjacent in a predetermined direction, the bottoms of memory strings being formed in a way that a plurality of gate electrode films that intersect a pillar-shaped semiconductor film with a charge storage layer formed on the side surface are formed on the side surface of the memory device in a height direction.SOLUTION: In the memory strings MS of the nonvolatile semiconductor memory device, a plurality of memory cell transistors MC having a control gate electrode film 122 are arranged on the side surface of a pillar-shaped semiconductor film 131C through a charge storage layer 132 in the height direction of the pillar-shaped semiconductor film 131C. The plurality of memory strings MS arranged on a semiconductor substrate 101 are connected to the control gate electrode films 122 of the memory cell transistors MC with the same height as the memory strings MS arranged in a word line direction. The nonvolatile semiconductor device is provided with a connecting portion connecting the lower parts of two pillar-shaped semiconductor films 131C that are adjacent in the direction of a bit line. The pillar-shaped semiconductor films 131C are configured of a Ge film or SiGe film of nearly single crystal shape, respectively. |
