发明名称 METHOD TO INCREASE YIELD AND REDUCE DOWN TIME IN SEMICONDUCTOR FABRICATION UNITS BY PRECONDITIONING COMPONENTS USING SUB-APERTURE REACTIVE ATOM ETCH
摘要 An embodiment of the present inventions provides a method for preconditioning a semiconductor fabrication component using a plasma etching process and an optional enhanced ultrasonic and/or megasonic preconditioning step in order to eliminate the need for a burn-in period typically associated with said components, as well as extend the useful life of the component during its wear-out phase.
申请公布号 US2011239429(A1) 申请公布日期 2011.10.06
申请号 US20090997205 申请日期 2009.06.02
申请人 POCO GRAPHITE, INC. 发明人 HAMBEK WAYNE
分类号 B23P6/00;C23F1/00 主分类号 B23P6/00
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