| 摘要 |
A solid-state imaging apparatus is provided that including a plurality of amplifiers each one amplifying a signal from each one of a plurality of pixels. The amplifier including first and second field effect transistors, gate electrodes of which are connected to the same voltage node (VBL); and a first wiring connected between the voltage node and the gate electrodes of the first and second field effect transistors. The first and second field effect transistors are arranged in a direction perpendicular to a direction in which the plurality of amplifiers is arranged. Material of the first wiring has a resistivity smaller than that of the gate electrodes of the first and second field effect transistors.
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