发明名称 |
Silicide Contact Formation |
摘要 |
A method for forming a silicide contact includes depositing a metal layer on silicon such that the metal layer intermixes with the silicon to form an intermixed region on the silicon; removing an unintermixed portion of the metal layer from the intermixed region; and annealing the intermixed region to form a silicide contact on the silicon. A semiconductor device comprising a silicide contact located over a silicon layer of the semiconductor device, the silicide contact comprising nickel (Ni) and silicon (Si) and having Ni amount equivalent to a thickness of about 21 angstroms or less. |
申请公布号 |
US2011241213(A1) |
申请公布日期 |
2011.10.06 |
申请号 |
US20100754912 |
申请日期 |
2010.04.06 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;GLOBAL FOUNDRIES INC. |
发明人 |
KELLOCK ANDREW J.;LAVOIE CHRISTIAN;OZCAN AHMET;ROSSNAGEL STEPHEN;YANG BIN;ZHANG ZHEN;ZHU YU;ZOLLNER STEFAN |
分类号 |
H01L23/532;H01L21/768 |
主分类号 |
H01L23/532 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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