METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH BURIED GATE,申请号KR20100028350-传众专利搜索

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发明名称	METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH BURIED GATE
摘要
申请公布号	KR20110108887(A)	申请公布日期	2011.10.06
申请号	KR20100028350	申请日期	2010.03.30
申请人	HYNIX SEMICONDUCTOR INC.	发明人	AHN, TAE HANG
分类号	H01L21/336	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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