发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a bubbler that can select a supply system for a raw material gas to a substrate processing apparatus in accordance with the kind of a liquid raw material and vaporization pressure of the liquid raw material.SOLUTION: The substrate processing apparatus 10 includes: a carrier gas MFC 106, a first valve 107 and a second valve 108 provided to a carrier gas supply line 103 for supplying a carrier gas for bubbling the liquid raw material; a low differential pressure MFC 112, a fourth valve 111 and a fifth valve 113 provided to a raw material gas supply line 109 for supplying the raw material gas, obtained by vaporizing the liquid raw material, into a processing container 200; and a bypass line 115 and a sixth valve 116 branching off from the raw material gas supply line 109 and provided to bypass the low differential pressure MFC 112, fourth valve 111 and fifth valve 113.
申请公布号 JP2011199005(A) 申请公布日期 2011.10.06
申请号 JP20100064082 申请日期 2010.03.19
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 TAKADERA HIROYUKI
分类号 H01L21/31;C23C16/448;H01L21/205 主分类号 H01L21/31
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