| 摘要 |
In a process for forming trenches having M different widths in a substrate, a passivation step and an etching step are alternately performed. The passivation step includes depositing a passivation layer on a bottom of the trenches by converting gas introduced in a chamber into plasma. The etching step includes removing the passivation layer on the bottom of the trenches and applying reactive ion etching to the bottom to increase a depth of the trenches. The etching step further includes setting energy for the reactive ion etching to a predetermined value when the passivation layer on the bottom of the trench having the Nth smallest width is removed. The value allows the etching amount of the trench having the Nth smallest width to be equal to or greater than the etching amount of the trench having the (N+1)th smallest width.
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